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SI4497DY-T1-GE3 Vishay Semiconductors | Mouser Việt Nam
SI4497DY-T1-GE3 Vishay Semiconductors MOSFET -30V Vds 20V Vgs SO-8 bảng dữ liệu, lượng tồn kho & giá cả.
Source: www.mouser.vn
Date Published: 7/10/2022
View: 7084
SI4497DY-T1-GE3 – Discrete Semiconductor Products – Digikey
Order today, ships today. SI4497DY-T1-GE3 – P-Channel 30 V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC from Vishay Siliconix.
Source: www.digikey.com
Date Published: 6/2/2021
View: 1536
Si4497DY P-Channel 30 V (D-S) MOSFET – Vishay
Si4497DY-T1-GE3. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-source voltage.
Source: www.vishay.com
Date Published: 11/8/2022
View: 1484
SI4497DY-T1-GE3 VISHAY – Transistor: P-MOSFET | unipolar
VISHAY SI4497DY-T1-GE3 | Transistor: P-MOSFET; unipolar; -30V; -29A; 5W; SO8 – This product is available in Transfer Multisort Elektronik.
Source: www.tme.eu
Date Published: 6/12/2021
View: 6211
SI4497DY-T1-GE3 – Vishay – Power MOSFET, P Channel, 30 V
Buy SI4497DY-T1-GE3 – Vishay – Power MOSFET, P Channel, 30 V, 36 A, 0.0027 ohm, SOIC, Surface Mount. element14 offers special pricing, same day dispatch, …
Source: in.element14.com
Date Published: 9/26/2022
View: 1689
SI4497DY-T1-GE3 Datasheet(PDF) – Vishay Siliconix
P-Channel 30 V (D-S) MOSFET, SI4497DY-T1-GE3 Datasheet, SI4497DY-T1-GE3 circuit, SI4497DY-T1-GE3 data sheet : VISHAY, alldatasheet, Datasheet, …
Source: www.alldatasheet.com
Date Published: 7/19/2021
View: 5801
SI4497DY-T1-GE3 Vishay – MOSFETs – Distributors, Price … – Octopart
Vishay SI4497DY-T1-GE3 technical specifications, attributes, and parameters. Physical. Case/Package, SOIC. Mount, Surface Mount. Number of Pins, 8.
Source: octopart.com
Date Published: 5/17/2022
View: 9517
SI4497DY-T1-GE3 Vishay – Datasheet PDF, Footprint, Symbol …
Download the SI4497DY-T1-GE3 datasheet from Vishay. 30V 36A 7.8W 3.3m¦¸@10V, 20A 2.5V@250¦ÌA P Channel SOIC-8_150mil MOSFETs ROHS.
Source: www.allaboutcircuits.com
Date Published: 6/9/2021
View: 863
SI4497DY-T1-GE3 by Vishay | MOSFETs | Arrow.com
Buy SI4497DY-T1-GE3 with fast, free shipping on qualifying orders. View datasheets, stock and pricing, or find other MOSFETs.
Source: www.arrow.com
Date Published: 4/28/2021
View: 287
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주제에 대한 기사 평가 si4497dy t1 ge3
- Author: Hoàng Văn Dũng
- Views: 조회수 7,300회
- Likes: 좋아요 84개
- Date Published: 2019. 6. 14.
- Video Url link: https://www.youtube.com/watch?v=0SCBUtLwVMU
SI4497DY-T1-GE3 Vishay Semiconductors | Mouser
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SI4497DY-T1-GE3 Vishay Siliconix
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SI4497DY-T1-GE3 VISHAY – Transistor: P-MOSFET
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Power MOSFET, P Channel, 30 V
1 ( Cut Tape 2646384 ) x 207 = Rs.207.00 Total Price: Rs.207.00
For the quantity ordered, some or all of your order will be placed on backorder. See ‘Check stock and lead times’ for details.
SI4497DY-T1-GE3 Vishay – MOSFETs – Distributors, Price Comparison, and Datasheets
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SI4497DY-T1-GE3 by Vishay
EU RoHS Compliant ECCN (US) EAR99 Part Status Active Automotive No PPAP No Product Category Power MOSFET Configuration Single Quad Drain Triple Source Process Technology TrenchFET Channel Mode Enhancement Channel Type P Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 30 Maximum Gate Source Voltage (V) ±20 Maximum Gate Threshold Voltage (V) 2.5 Operating Junction Temperature (°C) -55 to 150 Maximum Continuous Drain Current (A) 24.8 Maximum Gate Source Leakage Current (nA) 100 Maximum IDSS (uA) 1 Maximum Drain Source Resistance (MOhm) 3.3@10V Typical Gate Charge @ Vgs (nC) 190@10V|[email protected] Typical Gate Charge @ 10V (nC) 190 Typical Gate to Drain Charge (nC) 26.5 Typical Gate to Source Charge (nC) 27.5 Typical Reverse Recovery Charge (nC) 23 Typical Input Capacitance @ Vds (pF) 9685@15V Typical Reverse Transfer Capacitance @ Vds (pF) 995@15V Minimum Gate Threshold Voltage (V) 1 Typical Output Capacitance (pF) 995 Maximum Power Dissipation (mW) 3500 Typical Fall Time (ns) 25|42 Typical Rise Time (ns) 13|75 Typical Turn-Off Delay Time (ns) 115|100 Typical Turn-On Delay Time (ns) 19|100 Minimum Operating Temperature (°C) -55 Maximum Operating Temperature (°C) 150 Packaging Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W) 3.5 Maximum Pulsed Drain Current @ TC=25°C (A) 70 Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 80 Typical Diode Forward Voltage (V) 0.7 Typical Gate Plateau Voltage (V) 2.7 Typical Reverse Recovery Time (ns) 31 Maximum Diode Forward Voltage (V) 1.2 Minimum Gate Resistance (Ohm) 0.5 Maximum Gate Resistance (Ohm) 4.6 Maximum Positive Gate Source Voltage (V) 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A) 24.8 Mounting Surface Mount Package Height 1.55(Max) Package Width 4(Max) Package Length 5(Max) PCB changed 8 Standard Package Name SOP Supplier Package SOIC N Pin Count 8 Lead Shape Gull-wing
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay’s SI4497DY-T1-GE3 power MOSFET can provide a solution. Its maximum power dissipation is 3500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
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